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DESIGN APPLICATION NOTE --- AN022 SGA-9289 Amplifier Application Circuits
Abstract Stanford Microdevices' SGA-9289 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. The amplifier is manufactured using the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The process has a VBCEO=8V and an fT=25 GHz. The SiGe HBT process makes the SGA-9289 a very cost-effective solution for applications requiring high linearity at moderate biasing levels. This application note illustrates several application circuits for key frequency bands in the 800-2500 MHz spectrum. Introduction The application circuits were designed to achieve the optimum combination of P1dB and OIP3 while maintaining flat gain and reasonable return losses. Special consideration was given to insure amplifier stability at low frequencies where the device exhibits high gain. These designs were created to illustrate the general performance capabilities of the device under CW conditions. Users may wish to modify these designs to achieve optimum performance under specific input conditions and system requirements. The circuits contain only surface mountable devices and were designed with automated manufacturing requirements in mind. All recommended components are standard values available from multiple manufacturers. The components specified in the bill of materials (BOM) have known parasitics, which in some cases are critical to the circuit's performance. Deviating from the recommended BOM may result in a performance shift due to varying parasitics - primarily in the inductors and capacitors. Biasing Techniques These SiGe HBT amplifiers exhibit a "soft" breakdown effect (VBCEO=7.5V minimum) which allows for large signal operation at VCE=5V. The user should insure that under large signal conditions the source and load impedances presented to the device don't result in excessive collector currents near breakdown. Small signal operation with VCE<7V is acceptable.
SGA-9289
Silicon Germanium HBT Amplifier
Product Features
* * * * * DC-3500 MHz Operation High Output IP3, +41.5 dBm Typical at 1.96 GHz 11.0 dB Gain Typical at 1.96 GHz 28.6 dBm P1dB Typical at 1.96 GHz Cost Effective
Applications
* Wireless Infrastructure Driver Amplifiers * CATV Amplifiers * Wireless Data, WLL Amplifiers
Absolute Maximum Ratings
Parameter Base Current Collector Current Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Operating Temperature Storage Temperature Range Operating Junction Temperature Symbol IB IC V C EO V C BO V EBO TOP Tstor TJ Value 20 400 7.0 18 4.8 -40 to +85 -40 to +150 +150 Unit mA mA V V V C C C
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 1
http://www.stanfordmicro.com
EAN-101535 Rev A
DESIGN APPLICATION NOTE --- AN022 SGA-9289 Amplifier Application Circuits
All HBT amplifiers are subject to device current variation due to the decreasing nature of the internal VBE with increasing temperature. In the absence of an active bias circuit or resistive feedback, the decreasing VBE will result in increased base and collector currents. As the collector current continues to increase under constant VCE conditions the device may eventually exceed its maximum dissipated power limit resulting in permanent device damage. The designs included in this application note contain passive bias circuits that stabilize the device current over temperature and desensitize the circuit to device process variation. The passive bias circuits used in these designs include a dropping resistor in the collector bias line and a voltage divider from collector-to-base. Using this scheme the amplifier can be biased from a single supply voltage. The collector-dropping resistor is sized to drop 2-3V depending on the desired VCE . The voltage divider from collector-to-base, in conjunction with the dropping resistor, will stabilize the device current over temperature. Configuring the voltage divider such that the shunt current is 5-10 times larger than the desired base current desensitizes the circuit to device process variation. These two feedback mechanisms are sufficient to insure consistent performance over temperature and device process variations. Note that the voltage drop is clearly dependent on the nominal collector current and can be adjusted to generate the desired VCE from a fixed supply rail. The user should test the circuit over the operational extremes to guarantee adequate performance if the feedback mechanisms are reduced. An active bias circuit can be implemented if the user does not wish to sacrifice the voltage required by the aforementioned passive circuit. There are various active bias schemes suitable for HBTs. The user should choose an active bias circuit that best meets his cost, complexity and performance requirements. Circuit Details SMDI will provide the detailed layout (AutoCad format) to users wishing to use the exact same layout and PCB material shown in the following circuits. The circuits recommended within this application note were designed using the following PCB stack up: Material: GETEKa ML200C Core thickness: 0.031" Copper cladding: 1oz both sides Dielectric constant: 4.1 Dielectric loss tangent: 0.0089 (@ 1 GHz) Customers not wishing to use the exact material and layouts shown in this application note can design their own PCB using the critical transmission line impedances and phase lengths shown in the BOMs and layouts.
Vcc
+
VDROP
Ic IB
+
VCE
ISHUNT
-
Passive Bias Circuit Topology
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 2
http://www.stanfordmicro.com
EAN-101535 Rev A
DESIGN APPLICATION NOTE --- AN022 SGA-9289 Amplifier Application Circuits 870-960 MHz Application Circuit (VCE=3V, Icq=315mA, 25C)
R4 Vs=+5V R5 R3 C7 C8
R2
RFin
C3
RFout
SGA-9289 C6
R1 C4 C1 L1 C2 L2 C5
L3
C9
C10
SGA-9289, Vce=3V, 870-960 MHz Apps Circuit STANFORD MICRODEVICES SOT-89 Eval Board ECB-100608-B
R ef D es. C 1,10 C2 C 3,7 C 4,6 C5 C8 C9 L1 L 2,3 R1 R2 R3 R 4,5
Value 68 pF 3.9 pF .1 uF 39 pF 10 pF 1000 pF 6.8 pF 6.8 nH 82 nH 10 ohms 56 ohms 150 ohms 12 ohms
Part Number Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series TOKO LL1608-series TOKO LL1608-series Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series 2512 pkg 1 WATT
Ref. Des. Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8
Value 50 Ohms, 19 deg. @ 915 MHz 50 Ohms, 6 deg. @ 915 MHz 50 Ohms, 9.3 deg. @ 915 MHz 50 Ohms, 1.4 deg. @ 915 MHz 50 Ohms, 5.3 deg. @ 915 MHz 50 Ohms, 14.1 deg. @ 915 MHz 50 Ohms, 21.7 deg. @ 915 MHz 50 Ohms, 22.1 deg. @ 915 MHz
R4
+5 V
R3
R5
C3
R1
R2
C7
C8
C6 L3
C4
L2 SGA-9289 C10 Z6 Z7 Z8
C1 Z1 Z2
C2 Z3 Z4 Z5
C9 L1 C5
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 3
http://www.stanfordmicro.com
EAN-101535 Rev A
DESIGN APPLICATION NOTE --- AN022 SGA-9289 Amplifier Application Circuits Typical Performance - 870-960 MHz Application Circuit (VCE=3V, ICQ=315mA, 25C)
S-Parameters vs Frequency
20 18
Gain
P1dB, OIP3 vs Frequency
0 -6 -12 -18
27.5 42 41 26.5 25.5 24.5 23.5 22.5 0.87
OIP3 @ 10 dBm/tone P1dB
Isolation (dB)
P1dB (dBm)
OIP3 (dBm)
Gain (dB)
16 14 12 10 0.8 0.85 0.9 0.95 1
Isolation
40 39 38 37 0.96
-24 -30
0.90
0.93
Frequency (GHz) S-Parameters vs Frequency
Pout (dBm), Gain (dB)
0 -5
30 25 20
Frequency (GHz) Pout, Gain, Ic vs Pin
350
Pout
IRL, ORL (dB)
340
-10 -15 -20 -25 -30 -35 0.8 0.85 0.9
IRL
ORL
Ic (mA)
330
Gain
15 10 5
Ic
320 310 300 0 4 8 12 16
0.95
1
Frequency (GHz) OIP3 vs Tone Level
41 40
Pin (dBm) Noise Figure vs Frequency
5
Noise Figure (dB)
4 3 2 1 0 0.87
OIP3 (dBm)
39 38 37 36 6 8 10 12 14 16
0.90
0.93
0.96
Pout / Tone (dBm)
Frequency (GHz)
Freq (GHz ) 0.880 0.915 0.945
P 1d B (dBm) 25.6 25.5 25.4
OIP3 (dBm) 38.7 38.6 38.6
Gain (dB) 17.3 17.0 16.8
S11 (dB) -25.7 -29.7 -33.0
S 22 (dB) -7.9 -8.7 -9.6
NF (dB) 2.5 2.5 2.6
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 4
http://www.stanfordmicro.com
EAN-101535 Rev A
DESIGN APPLICATION NOTE --- AN022 SGA-9289 Amplifier Application Circuits 870-960 MHz Application Circuit (VCE=5V, Icq=340mA, 25C)
R4 Vs=+8V R5 R2 R6
R3 C7 C8
RFin
C3 R1 C4 C1 L1 C2 C5 L2 L3 C9 SGA-9289 C6
RFout
C10
SGA-9289, Vce=5V, 870-960 MHz Apps Circuit STANFORD MICRODEVICES SOT-89 Eval Board ECB-100608-B
R ef D es. C 1,10 C 2,9 C 3,7 C 4,6 C5 C8 L1 L 2,3 R1 R2 R3 R4 R5
Value 68 pF 3.9 pF .1 uF 39 pF 10 pF 1000 pF 10 nH 82 nH 10 ohms 36 ohms 220 ohms 16 ohms 18 ohms
Part Number Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series TOKO LL1608-FH82NT TOKO LL1608-FH82NT size 0603 size 0603 size 0603 2512 pkg 1 WATT 2512 pkg 1 WATT
Ref. Des. Z1 Z2 Z3 Z4 Z5 Z6 Z7
Value 50 Ohms, 13.6 deg. @ 915 MHz 50 Ohms, 3.5 deg. @ 915 MHz 50 Ohms, 3.4 deg. @ 915 MHz 50 Ohms, 6.7 deg. @ 915 MHz 50 Ohms, 6.6 deg. @ 915 MHz 50 Ohms, 23.5 deg. @ 915 MHz 50 Ohms, 4.5 deg. @ 915 MHz
R4
+8V
R2
R3
R5
C7
C8
R1 C3
R6
C6 L3
C4 L2 C1 Z1 Z2 C2 Z3 Z4
SGA-9289 Z5 Z6 Z7
C10
C9 L1 C5
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 5
http://www.stanfordmicro.com
EAN-101535 Rev A
DESIGN APPLICATION NOTE --- AN022 SGA-9289 Amplifier Application Circuits Typical Performance - 870-960 MHz Application Circuit (VCE=5V, ICQ=340mA, 25C)
S-Parameters vs Frequency
20
Gain
P1dB, OIP3 vs Frequency
0 -6 -12 -18
30 29 45
P1dB
18
44
Isolation (dB)
P1dB (dBm)
OIP3 (dBm)
Gain (dB)
16 14
Isolation
28 27 26 25 0.87
OIP3 @ 13 dBm/tone
43 42 41 40 0.96
12 10 0.8 0.85 0.9 0.95 1
-24 -30
0.9
0.93
Frequency (GHz) S-Parameters vs Frequency
-5 0
Frequency (GHz) Pout, Gain, Ic vs Pin
Pout (dBm), Gain (dB)
35 30 25 20 15 10 5 -1 2 5 8 11
Gain Ic Pout
370 360
IRL, ORL (dB)
-10 -15 -20 -25 -30 -35 0.8 0.85 0.9
ORL
Ic (mA)
350 340 330 320 14
IRL
0.95
1
Frequency (GHz) OIP3 vs Tone Level
43
Pin (dBm) Noise Figure vs Frequency
5
Noise Figure (dB)
42
4 3 2 1 0 0.87
OIP3 (dBm)
41 40 39 38 6 8 10 12 14 16
0.9
0.93
0.96
Pout / Tone (dBm)
Frequency (GHz)
Freq (GHz ) 0.880 0.915 0.945
P 1d B (dBm) 29.2 29.2 29.0
OIP3 (dBm) 41.4 41.3 40.9
Gain (dB) 18.2 17.9 17.7
S11 (dB) -17.6 -25.8 -25.2
S 22 (dB) -16.4 -15.1 -14.3
NF (dB) 2.8 2.9 2.9
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 6
http://www.stanfordmicro.com
EAN-101535 Rev A
DESIGN APPLICATION NOTE --- AN022 SGA-9289 Amplifier Application Circuits 1930-1990 MHz Application Circuit (VCE=3V, Icq=315mA, 25C)
Vs=+5V R4
R2
R3 C7 C8
RFin
C2
RFout
SGA-9289 C6
R1 C3 L1 C1 C4
L2 C5
C9
SGA-9289, Vce=3V, 1930-1990 MHz Apps Circuit STANFORD MICRODEVICES SOT-89 Eval Board ECB-100608-B
R ef D es. C1 C 2,7 C 3,6,9 C 4,5 C8 L 1,2 R1 R2 R3 R 4,5
Value 1.5 pF 0.1 uF 12 pF 2.2 pF 1000 pF 22 nH 10 ohms 56 ohms 150 ohms 12 ohms
Part Number Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series TOKO LL1608-series Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series 2512 pkg 1 WATT
Ref. Des. Z1 Z2 Z3 Z4 Z5
Value 50 Ohms, 7.7 deg. @ 1960 MHz 50 Ohms, 6.9 deg. @ 1960 MHz 50 Ohms, 7.2 deg. @ 1960 MHz 50 Ohms, 14.3 deg. @ 1960 MHz 50 Ohms, 43.8 deg. @ 1960 MHz
R4 +5V
R3
R5
C2
R1
R2
C7
C8
C6 L2
C3 C1 Z1
L1 SGA-9289 Z4 Z2 Z3 C5 C4 Z5
C9
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 7
http://www.stanfordmicro.com
EAN-101535 Rev A
DESIGN APPLICATION NOTE --- AN022 SGA-9289 Amplifier Application Circuits Typical Performance - 1930-1990 MHz Application Circuit (VCE=3V, ICQ=315mA, 25C)
S-Parameters vs Frequency
15 13 0
26.5
P1dB, OIP3 vs Frequency
42
P1dB
P1dB (dBm)
-6
Gain
25.5 24.5 23.5 22.5 21.5 1.93
41
Isolation (dB)
OIP3 (dBm)
Gain (dB)
11 9 7 5 1.8
-12 -18 -24 -30
40
OIP3 @ 10 dBm/tone
Isolation
39 38 37 1.99
1.9
2.0
2.1
1.95
1.97
Frequency (GHz) S-Parameters vs Frequency
-5
Frequency (GHz) Pout, Gain, Ic vs Pin
Pout (dBm), Gain (dB)
30 25 20
Ic Pout
0
340 330
IRL, ORL (dB)
-10 -15 -20 -25 -30 -35 1.8
ORL
IRL
Ic (mA)
320 310
Gain
15 10 5
300 290
1.9
2.0
2.1
0
5
10
15
20
Frequency (GHz) OIP3 vs Tone Level
41
Pin (dBm) Noise Figure vs Frequency
5
Noise Figure (dB)
6 8 10 12 14 16
40
4 3 2 1 0 1.93
OIP3 (dBm)
39 38 37 36
1.95
1.97
1.99
Pout / Tone (dBm)
Frequency (GHz)
Freq (GHz ) 1.93 1.96 1.99
P 1d B (dBm) 25.9 26.0 26.0
OIP3 (dBm) 39.3 39.3 38.4
Gain (dB) 11.1 11.0 10.9
S11 (dB) -16.9 -20.5 -27.4
S 22 (dB) -15.7 -15.5 -15.9
NF (dB) 2.8 2.9 2.9
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 8
http://www.stanfordmicro.com
EAN-101535 Rev A
DESIGN APPLICATION NOTE --- AN022 SGA-9289 Amplifier Application Circuits 1930-1990 MHz Application Circuit (VCE=5V, Icq=340mA, 25C)
R5
Vs=+8V
R3 R2
R4 C7 C8
RFin
C2 R1 C3
RFout
SGA-9289 C5
C1
L1 C4
L2
C6 C9
SGA-9289, Vce=5V, 1930-1990 MHz Apps Circuit STANFORD MICRODEVICES SOT-89 Eval Board ECB-100608-B
R ef D es. C 1,3,5,9 C 2,7 C4 C6 C8 L 1,2 R1 R2 R3 R4 R5 R6
Value 12 pF 0.1 uF 2.7 pF 1.8 pF 1000 pF 22 nH 10 ohms 51 ohms 16 ohms 240 ohms 16 ohms 18 ohms
Part Number Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series TOKO LL1608 series Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series 2512 pkg 1 WATT 2512 pkg 1 WATT
Ref. Des. Z1 Z2 Z3 Z4 Z5 Z6
Value 50 Ohms, 47.1 deg. @ 1960 MHz 50 Ohms, 7 deg. @ 1960 MHz 50 Ohms, 7.2 deg. @ 1960 MHz 50 Ohms, 14.3 deg. @ 1960 MHz 50 Ohms, 4.8 deg. @ 1960 MHz 50 Ohms, 42.2 deg. @ 1960 MHz
R5
+8V
R3
R4
R6
C7
C8
C2
R1
R2
C5 L2
C3 C1 Z1
L1 SGA-9289 Z4 Z2 Z3 C6 C4 Z5 Z6
C9
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 9
http://www.stanfordmicro.com
EAN-101535 Rev A
DESIGN APPLICATION NOTE --- AN022 SGA-9289 Amplifier Application Circuits Typical Performance - 1930-1990 MHz Application Circuit (VCE=5V, ICQ=340mA, 25C)
S-Parameters vs Frequency
15 13 0 -6
Gain
P1dB, OIP3 vs Frequency
30 29 44
P1dB
43
Isolation (dB)
P1dB (dBm)
OIP3 (dBm)
Gain (dB)
11 9 7 5 1.8 1.85 1.9 1.95
-12 -18 -24 -30
28 27 26 25 1.93
OIP3 @ 13 dBm/tone
42 41 40 39 1.99
Isolation
2
2.05
2.1
1.95
1.97
Frequency (GHz) S-Parameters vs Frequency
-5 -10 -15 -20 -25 -30 1.8 1.85 1.9 1.95 2 2.05 2.1
ORL IRL
Frequency (GHz) Pout, Gain, Ic vs Pin
Pout (dBm), Gain (dB)
35 29 23 17
Ic Pout
0
370 360
IRL, ORL (dB)
Ic (mA)
350 340 330
Gain
11 5 8 10 12 14 16 18 20 22
320
Frequency (GHz) OIP3 vs Tone Level
45 43 6
Pin (dBm) Noise Figure vs Frequency
Noise Figure (dB)
5 4 3 2 1 1.93
OIP3 (dBm)
41 39 37 35 8 10 12 14 16 18 20
1.95
1.97
1.99
Pout / Tone (dBm)
Frequency (GHz)
Freq (GHz ) 1.93 1.96 1.99
P 1d B (dBm) 28.5 28.5 28.7
OIP3 (dBm) 41.3 41.4 41.4
Gain (dB) 11.1 10.9 10.7
S11 (dB) -14.1 -15.1 -14.9
S 22 (dB) -19.8 -19.5 -19.1
NF (dB) 4.0 4.1 4.3
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 10
http://www.stanfordmicro.com
EAN-101535 Rev A

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